N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Tuned for the lowest RDS x Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Prim

文件：185.08 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 60 V (D-S) MOSFET

• TrenchFET® Gen IV power MOSFET\n• Very low RDS x Qg figure-of-merit (FOM)\n• Tuned for the lowest RDS x Qoss FOM;

Vishay

威世

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Tuned for the lowest RDS x Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Prim

文件：183.92 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

Rectifier Diode Modules

文件：891.2 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

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N-Ch and P-Channel MOSFET

文件：697.8 Kbytes 页数：6 Pages

WIINSOK

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