| 订购数量 | 价格 |
|---|---|
| 1+ |
首页>SIS413DN-T1-GE3>芯片详情
SIS413DN-T1-GE3_VISHAY/威世_MOSFET -30V 9.4mOhm@10V -18A P-Ch G-III禾兴威科技
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SIS413DN-T1-GE3
- 功能描述:
MOSFET -30V 9.4mOhm@10V -18A P-Ch G-III
- RoHS:
否
- 制造商:
Vishay Semiconductors
- 晶体管极性:
P-Channel
- 汲极/源极击穿电压:
30 V
- 闸/源击穿电压:
+/- 20 V
- 漏极连续电流:
18 A 电阻汲极/源极
- RDS(导通):
9.4 mOhms
- 配置:
Single
- 最大工作温度:
+ 150 C
- 安装风格:
SMD/SMT
- 封装/箱体:
PowerPAK 1212-8
- 封装:
Reel
供应商
相近型号
- SIS412DP-T1-GE3
- SIS414DN-T1-GE3
- SIS414DN-T1-GE3IC
- SIS412DN-TI-GE3
- SIS415DN-T1-E3
- SIS415DN-T1-E3T
- SIS412DN-T1-GE3-W
- SIS415DN-T1-GE3
- SIS412DN-T1-GE3QFN8
- SIS415DNT-T1-E3
- SIS415DNTT1GE3
- SIS412DN-T1-GE3IC
- SIS415DNT-T1-GE3
- SIS412DN-T1-GE3-ES
- SIS416DN-T1-E3
- SIS412DN-T1-GE3
- SIS416DNT-T1-GE3
- SIS412DNT1GE3
- SIS42224VDC
- SIS422-24VDC
- SIS412DN-T1-E3
- SIS423
- SIS412DN-T1
- SIS424DN
- SIS412DN1-GE3
- SIS424DN-T1-E3
- SIS412DN-1-GE3
- SIS424DNT1GE3
- SIS412DN1-E3
- SIS424DN-T1-GE3
- SIS412DN1
- SIS412DN
- SIS424DN-VB
- SIS412
- SIS426DN
- SIS426DN1-E3
- SIS410DN-T1-GE3
- SIS426DN1-GE3
- SIS410DNT1GE3
- SIS426DN-T1-E3
- SIS410DN-T1-E3
- SIS410DN
- SIS426DN-T1-GE
- SIS4101PT1G
- SIS426DNT1GE3
- SIS4101P
- SIS426DN-T1-GE3
- SIS40C3208-20
- SIS426DN-T1-GE3CT
- SIS407DN-T1-GE4



