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详细参数
- 型号：
SIR850DP-T1-GE3
- 功能描述：
MOSFET 25V 30A 41.7W 7.0mohm @ 10V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
PowerPAKSO-8 |
20300 |
VISHAY/威世原装特价SIR850DP-T1-GE3即刻询购立享优惠#长期有货 |
询价 | ||
VISHAY |
25+ |
QFN8 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
ANPEC/茂达电子 |
23+ |
TO252 |
8800 |
只做原装正品现货 |
询价 | ||
VISHAY(威世) |
24+ |
PowerPAK-SO-8 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
VISHAY/威世 |
25+ |
QFN8 |
25000 |
只做进口原装假一罚百 |
询价 | ||
VISHAY |
24+ |
SO-8 |
26200 |
原装现货,诚信经营! |
询价 | ||
Vishay/Siliconix |
24+ |
SO-8 |
7500 |
询价 | |||
VIS |
23+ |
QFN8 |
5000 |
原装正品,假一罚十 |
询价 | ||
VISHAY |
16+ |
QFN8 |
8800 |
进口原装大量现货热卖中 |
询价 | ||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 |
更多SIR850DP-T1-GE3供应商
更新时间2025-12-21 9:03:00
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