| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SIR8 | SIR 8 Series 文件：310.66 Kbytes 页数：1 Pages | ELESTA | ELESTA | |
N-Channel 80 V (D-S) MOSFET FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Prim 文件：391.98 Kbytes 页数：13 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
N-Channel Enhancement Mode MOSFET Features + Advanced trench cell design + Low Thermal Resistance * Low Gate Charge 文件：5.91812 Mbytes 页数：6 Pages | TECHPUBLIC 台舟电子 | TECHPUBLIC | ||
N-Channel 80 V (D-S) MOSFET FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Prim 文件：264.36 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
N-Channel 25 V (D-S) MOSFET FEATURES • TrenchFET ® power MOSFET • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC conversion - Low side switch • Notebook • Server • Game console 文件：363.46 Kbytes 页数：13 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
N-Channel 25 V (D-S) MOSFET FEATURES • TrenchFET ® power MOSFET • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC conversion - Low side switch • Notebook • Server • Game console 文件：363.46 Kbytes 页数：13 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
N-Channel 100 V (D-S) MOSFET FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Tuned for the lowest RDS x Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Prim 文件：242.98 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
N-Channel 100 V (D-S) MOSFETs FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC primary side switch • Telecom/server 48 V, full/half-bridge DC/DC • Industrial 文件：367.8 Kbytes 页数：13 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
N-Channel 100 V (D-S) MOSFETs FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC primary side switch • Telecom/server 48 V, full/half-bridge DC/DC • Industrial 文件：367.8 Kbytes 页数：13 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
N-Channel 80 V (D-S) MOSFET FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Prim 文件：240.31 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世科技 | Vishay |
技术参数
- Package：
PowerPAK SO-8
- Ch：
N
- VDS (V)：
80
- VGS (V)：
20
- RDS(on)@4.5V (Ω)：
0.0062
- RDS(on)@10V (Ω)：
0.005
- Qg @4.5V (nC)：
28.6
- Qg @10V (nC)：
60.5
- Qgs (nC)：
12.2
- Qgd (nC)：
7.8
- ID Max. (A)：
86
- PD Max. (W)：
83
- VGS(th) Min. (V)：
1
- Rg Typ. (Ω)：
0.8
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
24+/25+ |
3000 |
原装正品现货库存价优 |
询价 | |||
DISCRETE |
3000 |
SIX |
3000 |
询价 | |||
VIS |
23+ |
QFN8 |
5000 |
原装正品,假一罚十 |
询价 | ||
A |
24+ |
SOP-8 |
4 |
询价 | |||
VISHAY |
QFN |
1200 |
正品原装--自家现货-实单可谈 |
询价 | |||
VISHAY |
16+ |
QFN8 |
8800 |
进口原装大量现货热卖中 |
询价 | ||
VISHAY |
25+ |
QFN8 |
9745 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
VISHAY |
11+ |
QFN |
4200 |
原装现货价格有优势量多可发货 |
询价 | ||
VISHAY |
2016+ |
QFN |
3799 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
VISHAY |
24+ |
SO-8 |
5000 |
只做原装公司现货 |
询价 |
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