N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure of merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Prim

文件：176.98 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世科技

N-Channel 60 V (D-S) MOSFET

• TrenchFET® Gen IV power MOSFET\n• Tuned for the lowest RDS - Qoss FOM;

Vishay

威世科技

N-Channel 60 V (D-S) MOSFET

文件：623.2 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世科技

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Prim

文件：187.86 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世科技

Connection Validation™ Soldering Station

Features and Benefits • SmartHeat® Power-on-Demand Technology • Patented ConnectionValidation IMC Formation Technology • 2.8” color touchscreen with bold graphics • Communications Port for process traceability data and firmware graphics • Integrated Net Power Meter and power graph ° With op

文件：698.55 Kbytes 页数：6 Pages

METCAL