N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Prim

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VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60 V (D-S) MOSFET

• TrenchFET® Gen IV power MOSFET\n• Very low RDS - Qg figure-of-merit (FOM)\n• Tuned for the lowest RDS - Qoss FOM;

Vishay

威世

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

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STMICROELECTRONICS

意法半导体

HIGH ENERGY SPARK GAP DEVICES

DESCRIPTION CP Clare’s TG Legacy Series of two electrode sparkgaps excel in applications that require the efficient transfer of high voltage, high energy pulses and DC overvoltage protection for magnetrons, diodes, capacitors, etc. The TG Legacy Series also includes three electrode triggered sp

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CLARE

Clare, Inc.

Six Output Peak Reducing EMI Solution

Overview The W184 products are one series of devices in the Cypress PREMIS family. The PREMIS family incorporates the latest advances in PLL spread spectrum frequency synthesizer techniques. By frequency modulating the output with a low frequency carrier, peak EMI is greatly reduced. Use of thi

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CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司