N-Channel 40 V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Fully lead (Pb)-free device • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • Up to 200 A maximum continuous drain current • 50 smaller footprint than D2PAK / TO-263 • 100 Rg and UIS tested • Material categorization:

文件：253.35 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 40 V (D-S) 175 °C MOSFET

文件：199.89 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 40 V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Fully lead (Pb)-free device • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • Up to 200 A maximum continuous drain current • 50 smaller footprint than D2PAK / TO-263 • 100 Rg and UIS tested • Material categorization:

文件：253.35 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 40 V (D-S) 175 °C MOSFET

Vishay

威世