首页 >SIHP22N60EF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SIHP22N60EF | EF Series Power MOSFET With Fast Body Diode FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS • | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
HEXFETPOWERMOSFET DESCRIPTION AstheSMPSMOSFET,theUTC22N60usesUTC’sadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=0.35Ω *UltraLowGateCharge | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
22A,600VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-ChannelMOSFET | ESTEKEstek Electronics Co. Ltd 伊泰克电子北京伊泰克电子有限公司 | ESTEK | ||
N-ChannelMOSFET600V,22A,0.165W | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=165mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
UltraLowGateCharge(Typ.Qg=45nC),LowEffectiveOutputCapacitance(Typ.Coss.eff=196.4pF) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET600V,22A,0.165W Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelMOSFET600V,22A,0.165W Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelEnhancementModeMOSFET | ICEMOSIcemos Technology Icemos 技术 | ICEMOS | ||
N-ChannelEnhancementModeMOSFET | MICROSS MICROSS | MICROSS | ||
N-ChannelEnhancementModeMOSFET | ICEMOSIcemos Technology Icemos 技术 | ICEMOS | ||
N-ChannelEnhancementModeMOSFET | MICROSS MICROSS | MICROSS | ||
N-ChannelPowerMOSFET | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.28Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SMPSMOSFET Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EnhancedBodyDiodedv/dtCapability Applications •HardSwitchingPrimaryorPFSSwitch •SwitchM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EnhancedBodyDiodedV/dtCapability •ComplianttoRoHSDirective2002/95/EC BENEFITS | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •EnhancedbodydiodedV/dtcapability •Materialcategorization:fordefinitionsofcompliance ple | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EnhancedBodyDiodedV/dtCapability •ComplianttoRoHSDirective2002/95/EC BENEFITS | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay |
20+ |
n/a |
977 |
原装正品订货,请确认 |
询价 | ||
Vishay |
NEW- |
MOSFETs |
100000 |
Trans MOSFET N-CH 600V 19A 3-Pin(3+Tab) TO-220AB |
询价 | ||
VISHAY-威世 |
24+25+/26+27+ |
TO-220-3 |
13788 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
VISHAY/威世 |
TO-220-3 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
VISHAY/威世 |
2023+ |
SMD |
8635 |
一级代理优势现货,全新正品直营店 |
询价 | ||
Vishay Siliconix |
2022+ |
TO-220-3 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
VISHAY(威世) |
23+ |
TO220 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
Vishay Siliconix |
23+ |
SMD |
54000 |
原装正品实单可谈 库存现货 |
询价 | ||
23+ |
N/A |
82000 |
一级代理放心采购 |
询价 | |||
Vishay Siliconix |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 |
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