Power MOSFET

VDS (V) 200 RDS(on) (Ω) VGS = 5.0 V 0.80 Qg (Max.) (nC) 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivene

文件：2.03127 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：2.20053 Mbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：1.59241 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：107.31 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司