EF Series Power MOSFET With Fast Body Diode

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power

文件：167.95 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power

文件：157.01 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

EF Series Power MOSFET With Fast Body Diode

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power

文件：155.99 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

PolarHV HiPerFET Power MOSFET

文件：164.39 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 24A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 400mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：390.32 Kbytes 页数：2 Pages

ISC

无锡固电

PolarHV HiPerFET Power MOSFET

文件：164.39 Kbytes 页数：4 Pages

IXYS

艾赛斯