EF Series Power MOSFET With Fast Body Diode

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power

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VishayVishay Siliconix

威世威世科技公司

EF Series Power MOSFET With Fast Body Diode

• Low figure-of-merit (FOM) Ron x Qg\n• Low effective capacitance (Co(er))\n• Reduced switching and conduction losses\n\n\nAPPLICATIONS• Server and telecom power supplies\n• Switch mode power supplies (SMPS)\n• Power factor correction power supplies (PFC);

Vishay

威世

PolarHV HiPerFET Power MOSFET

文件：164.39 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 24A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 400mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：390.32 Kbytes 页数：2 Pages

ISC

无锡固电

PolarHV HiPerFET Power MOSFET

文件：164.39 Kbytes 页数：4 Pages

IXYS

艾赛斯