SIHB22N60EF规格书应用电路行情报价Vishay-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
SIHB22N60EF	文件：199.98 Kbytes Page：9 Pages	EF Series Power MOSFET With Fast Body Diode FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •	VishayVishay Siliconix 威世科技	Vishay
22N60	文件：241.12 Kbytes Page：6 Pages	HEXFETPOWERMOSFET DESCRIPTION AstheSMPSMOSFET,theUTC22N60usesUTC’sadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES RDS(ON)=0.35Ω UltraLowGateCharge	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
22N60	文件：211.84 Kbytes Page：6 Pages	22A,600VN-CHANNELPOWERMOSFET	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
ET-22N60	文件：986.23 Kbytes Page：2 Pages	N-ChannelMOSFET	ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd	ESTEK
FCA22N60N	文件：532.87 Kbytes Page：8 Pages	N-ChannelMOSFET600V,22A,0.165W	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCA22N60N	文件：347.13 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=165mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCH22N60N	文件：340.84 Kbytes Page：8 Pages	UltraLowGateCharge(Typ.Qg=45nC),LowEffectiveOutputCapacitance(Typ.Coss.eff=196.4pF)	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCP22N60N	文件：338.67 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCP22N60N	文件：763.08 Kbytes Page：10 Pages	N-ChannelMOSFET600V,22A,0.165W Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCPF22N60NT	文件：763.08 Kbytes Page：10 Pages	N-ChannelMOSFET600V,22A,0.165W Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
ICE22N60	文件：604.35 Kbytes Page：9 Pages	N-ChannelEnhancementModeMOSFET	ICEMOSIcemos Technology Icemos 技术	ICEMOS
ICE22N60	文件：961.58 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	MICROSS MICROSS	MICROSS
ICE22N60W	文件：605.59 Kbytes Page：8 Pages	N-ChannelEnhancementModeMOSFET	ICEMOSIcemos Technology Icemos 技术	ICEMOS
ICE22N60W	文件：959.93 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	MICROSS MICROSS	MICROSS
IRF22N60	文件：383.33 Kbytes Page：7 Pages	N-ChannelPowerMOSFET	NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司	NELLSEMI
IRFP22N60K	文件：445.29 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.28Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRFP22N60K	文件：172.39 Kbytes Page：8 Pages	SMPSMOSFET Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EnhancedBodyDiodedv/dtCapability Applications •HardSwitchingPrimaryorPFSSwitch •SwitchM	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFP22N60K	文件：150.15 Kbytes Page：8 Pages	PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EnhancedBodyDiodedV/dtCapability •ComplianttoRoHSDirective2002/95/EC BENEFITS	VishayVishay Siliconix 威世科技	Vishay
IRFP22N60K	文件：228.65 Kbytes Page：10 Pages	PowerMOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •EnhancedbodydiodedV/dtcapability •Materialcategorization:fordefinitionsofcompliance ple	VishayVishay Siliconix 威世科技	Vishay
IRFP22N60KPBF	文件：150.15 Kbytes Page：8 Pages	PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EnhancedBodyDiodedV/dtCapability •ComplianttoRoHSDirective2002/95/EC BENEFITS	VishayVishay Siliconix 威世科技	Vishay

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市惊羽科技有限公司	SIHB22N60EF	VISHAY-威世	24+25+/26+27+	TO-263-3	13788	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
中科航电（深圳）电子集团有限公司	SIHB22N60EF-GE3	SILICONIXVISHAY		N/A	90000	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价
深圳宝隆芯业科技有限公司	SIHB22N60EF-GE3	Vishay Siliconix	23+	SMD	67000	原装正品实单可谈库存现货	询价
深圳市河锋鑫科技有限公司	SIHB22N60EGE3	Vishay Siliconix	22+	TO2633 D2Pak (2 Leads + Tab) T	9000	原厂渠道,现货配单	询价
深圳市莱克讯科技有限公司	SIHB22N60E-GE3	VISHAY	2017+	TO263	32568	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市科恒伟业电子有限公司	SIHB22N60E-GE3	VISHAY	2016+	TO-263	6528	房间原装进口现货假一赔十	询价
深圳市达恩科技有限公司	SIHB22N60E-GE3	Vishay	18+	NA	3859	进口原装正品优势供应QQ3171516190	询价
深圳市华斯顿科技有限公司	SIHB22N60E-GE3	VISHAY	22+23+	TO-263	27127	绝对原装正品全新进口深圳现货	询价
深圳市百视威讯电子科技有限公司	SIHB22N60E-GE3		23+	N/A	45880	正品授权货源可靠	询价
深圳兆威电子有限公司	SIHB22N60E-GE3	VISHAY/威世	22+	TO-263	163306	原装正品现货,可开13个点税	询价

更多SIHB22N60EF供应商更新时间2024-5-25 16:16:00

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