SJ-IGBT

Super

超致半导体

iscN-Channel MOSFET Transistor

文件：319.99 Kbytes 页数：2 Pages

ISC

无锡固电

E Series Power MOSFET with Fast Body Diode and Low Gate Charge

文件：149.87 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

E Series Power MOSFET with Fast Body Diode and Low Gate Charge

FEATURES • Reduced figure-of-merit (FOM): Ron x Qg • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Increased robustness due to low Qrr • Low input capacitance (Ciss) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categ

文件：163.71 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司