N-Channel 30-V (D-S) MOSFET

FEATURES • Extremely Low Qgd WFET® Technology for    Low Switching Losses • Ultra Low Thermal Resistance Using    Top-Exposed PolarPAK® Package for    Double-Sided Cooling • Leadframe-Based New Encapsulated Package    - Die Not Exposed    - Same Layout Regardless of Die Size • Low Qgd/Qgs

文件：222.06 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

SiE830DF

Vishay

威世

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

文件：135.96 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge QgResults in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available  

文件：969.36 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.17388 Mbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司