N-Channel 30-V (D-S) MOSFET

FEATURES • Extremely Low Qgd WFET® Technology for    Low Switching Losses • Ultra Low Thermal Resistance Using    Top-Exposed PolarPAK® Package for    Double-Sided Cooling • Leadframe-Based New Encapsulated Package    - Die Not Exposed    - Same Layout Regardless of Die Size • Low Qgd/Qgs

文件：222.06 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

SiE830DF

Vishay

威世

DOUBLE CHANNEL HIGH SIDE DRIVER

DESCRIPTION The VND830 is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the devices against low energy spikes (see ISO7637 transient compatibility table)

文件：308.39 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

DOUBLE CHANNEL HIGH SIDE DRIVER

DESCRIPTION The VND830SP is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table

文件：266.39 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

QUAD CHANNEL HIGH SIDE DRIVER

Description The VNQ830 is a quad HSD formed by assembling two VND830 chips in the same SO-28 package. The VND830 is a monolithic device made using| STMicroelectronics™ VIPower™ M0-3 Technology. The device is intended for driving any type of multiple load with one side connected to ground. Featur

文件：308.59 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体