N-Channel 30-V (D-S) MOSFET

FEATURES • Extremely Low Qgd WFET® Technology for    Low Switching Losses • Ultra Low Thermal Resistance Using    Top-Exposed PolarPAK® Package for    Double-Sided Cooling • Leadframe-Based New Encapsulated Package    - Die Not Exposed    - Same Layout Regardless of Die Size • Low Qgd/Qgs

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SiE830DF

Vishay

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Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

文件：135.96 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET

FEATURES • Low Gate Charge QgResults in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available  

文件：969.36 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET

文件：1.17388 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世