N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure of merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 Rg and UIS tested • Top side cooling feature provides additional venue for thermal transfer • Material categorization: for definitions of compliance please see w

文件：177.92 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60 V (D-S) 175 °C MOSFET

• TrenchFET® Gen IV power MOSFET\n• Very low RDS - Qg figure of merit (FOM)\n• Tuned for the lowest RDS - Qoss FOM;

Vishay

威世

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 Rg and UIS tested • Top side cooling feature provides additional venue for thermal transfer • Material categorization: for definitions of compliance please see w

文件：223.62 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60 V (D-S) 175 째C MOSFET

文件：198.49 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60 V (D-S) MOSFET

文件：241.96 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司