内置充放电MOS(常规)

SICL3120SE是一款专为保护单串锂离子/聚合物电池的二次保护芯片，产品采用ESOP-8标准封装外形，可降低因电池过充而导致的电池损坏或寿命缩短的风险。 • 高精度电压检测\n• 低电流消耗\n• 采用标准表面贴装式ESOP-8封装\n• 不含卤素且符合RoHS及Reach测试标准;

Semiware

赛米微尔

SCHOTTKY DIODE REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 3.0A

DESCRIPTION The SM 32 0A SM 32 00A are available in SM A p ackage. FEATURES  Metal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, high frequency inverte

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AITSEMI

创瑞科技

SCHOTTKY DIODES REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A

DESCRIPTION The SM3 2 0 AF ~SM320 0 AF is available in SMAF p a ckage FEATURES  M etal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, high frequency i

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AITSEMI

创瑞科技

SCHOTTKY DIODE REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A

DESCRIPTION The SM320B~SM3200B are available in SMB Package. FEATURES  Metal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, high frequency inverters, fre

文件：392.07 Kbytes 页数：5 Pages

AITSEMI

创瑞科技