| 订购数量 | 价格 |
|---|---|
| 1+ |
首页>SiA817EDJ-T1-GE3>芯片详情
SiA817EDJ-T1-GE3_VISHAY/威世_MOSFET -30V .065Ohm@10V 4.5A P-Ch G-III坤融电子
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SiA817EDJ-T1-GE3
- 功能描述:
MOSFET -30V .065Ohm@10V 4.5A P-Ch G-III
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
相近型号
- SIA537EDJ
- SIA910EDJ-T1-GE3
- SIA527DJ-T1-GE3
- SIA911ADJ-T1-GE3
- SIA519EDJ-T1-GE3
- SIA911DJ-T1-E3
- SIA517DJ-T1-GE3
- SIA912DJ-T1-GE3
- SIA517DJ
- SIA914DJ-T1-E3
- SIA513DJ-T1-GE3
- SIA914DJ-T1-GE3
- SIA485DJ-T1-GE3
- SIA917DJ-T1-GE3
- SIA483DJ-T1-GE3
- SIA921EDJ
- SIA466EDJ-T1-GE3
- SIA921EDJ-T1-GE3
- SIA461DJ-T1-GE3
- SIA922EDJ-T1-GE3
- SIA456DJ-T1-GE3
- SIA923EDJ-T1-GE3
- SIA453EDJ-T1-GE3
- SIA929DJ
- SIA449DJ-T1-GE3
- SIA929DJ-T1-GE3
- SIA449DJ
- SIA931DJ
- SIA448DJ-T1-GE3
- SIA931DJ-T1-GE3
- SIA447DJ-T1-GE3
- SIA975DJ
- SIA446DJ-T1-GE3
- SIA975DJ-T1-GE3
- SIA445EDJ-T1-GE3
- SIAA00DJ-T1-GE3
- SIA444DJT-T1-GE3
- SIAA02DJ-T1-GE3
- SIA441DJ-T1-GE3
- SIB0505LD-1W
- SIA441DJ
- SIB0505LS-1W
- SIA440DJ-T1-GE3
- SIB0505LT-W75
- SIA439EDJ-T1-GE3
- SIB0505SLD-W75
- SIA438EDJ-T1-GE3
- SIB0505SLS-W75
- SIA437DJ-T1-GE3
- SIB0509LT-1W



