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首页>SI8405DB-T1-E1>芯片详情
SI8405DB-T1-E1_VISHAY/威世科技_MOSFET 12V 4.9A 2.77W金华微盛电
- 详细信息
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产品属性
- 类型
描述
- 型号:
SI8405DB-T1-E1
- 功能描述:
MOSFET 12V 4.9A 2.77W
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
- 企业:
深圳市金华微盛电子有限公司
- 商铺:
- 联系人:
柯小姐 13510157626
- 手机:
13823749993
- 询价:
- 电话:
0755-82550578
- 传真:
0755-82539558
- 地址:
深圳市福田区中航路新亚洲二期电子城四楼 N4A131房间
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