N-Channel 100 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Tuned for the lowest RDS x Qoss FOM • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Prim

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VISHAYVishay Siliconix

威世威世科技公司

N-Channel 100 V (D-S) MOSFET

Vishay

威世

4 WIDE AND ORIINVENT GATES

文件：97.62 Kbytes 页数：5 Pages

TI

德州仪器

5-WIDE AND-OR-INVERT GATES

文件：406.42 Kbytes 页数：11 Pages

TI

德州仪器

4-WIDE AND-OR-INVERT GATES

Package Options Inctude Plastic “Small Outline’ Packages, Ceramic Chip Carriers and Flat Packages, and Plastic and Ceramic DIPs Dependable Texas Instruments Quality and Reliability description ‘These devices contain 4-wide AND-OR-INVERT gates. They perform the following Boolean functio

文件：397.79 Kbytes 页数：12 Pages

TI

德州仪器