订购数量 | 价格 |
---|---|
1+ |
首页>SI7450DP-T1-E3>芯片详情
SI7450DP-T1-E3_VISHAY/威世科技_MOSFET 200V 5.3A 5.2W中天科工二部
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SI7450DP-T1-E3
- 功能描述:
MOSFET 200V 5.3A 5.2W
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
相近型号
- SI7448DP
- SI7455DP-T1-E3
- SI7448
- SI7455DP-T1-GE3
- SI7447DP-T1-GE3
- SI7456
- SI7447DP-T1-E3
- SI7456DDP
- SI7446
- SI7456DDP-T1-GE3
- SI7445DP-T1-GE3
- SI7456DP-T1-E3
- SI7445DP-T1-E3
- SI7459DP-T1-E3
- SI7440DP-T1-E3
- SI7459DP-T1-GE3
- SI7440
- SI7460DP
- SI7439DP-T1-GE3
- SI7460DP-T1-E3
- SI7439DP-T1-E3
- SI7460DP-T1-GE3
- SI7431DP-T1-GE3
- SI7461DP
- SI7431DP-T1-E3
- SI7461DP-T1-E3
- SI7431DP
- SI7461DP-T1-GE3
- SI7430DP-T1-GE3
- SI7463
- SI7430DP
- SI7463ADP
- SI7425DN-T1-GE3
- SI7463ADP-T1-GE3
- SI7423DN-T1-GE3
- SI7463DP
- SI7423DN-T1-E3
- SI7463DP-T1-E3
- SI7421DN-T1-GE3
- SI7463DP-T1-GE3
- SI7421DN-T1-E3
- SI7464DP
- SI7415DN-T1-GE3
- SI7464DP-T1-GE3
- SI7415DN
- SI7465DP
- SI7414DN-T1-E3
- SI7465DP-T1-E3
- SI7413DN-T1-E3
- SI7465DP-T1-GE3