| 订购数量 | 价格 | 
|---|---|
| 1+ | 
首页>SI7374DP-T1-E3>芯片详情
SI7374DP-T1-E3_VISHAY/威世_MOSFET 30V 24A 56W 5.5mohm @ 10V安凌芯科
- 详细信息
- 规格书下载
产品属性
- 类型描述 
- 型号:SI7374DP-T1-E3 
- 功能描述:MOSFET 30V 24A 56W 5.5mohm @ 10V 
- RoHS:否 
- 制造商:STMicroelectronics 
- 晶体管极性:N-Channel 
- 汲极/源极击穿电压:650 V 
- 闸/源击穿电压:25 V 
- 漏极连续电流:130 A 电阻汲极/源极 
- RDS(导通):0.014 Ohms 
- 配置:Single 
- 安装风格:Through Hole 
- 封装/箱体:Max247 
- 封装:Tube 
供应商
相近型号
- SI7370DP-T1-GE3IC
- SI7370DP-T1-GE3
- SI7380ADP-TI-E3
- SI7370DPT1GE3
- SI7380DP-T1
- SI7380DP-T1-E3
- SI7370DP-T1-E3MOS()
- SI7380DP-T1-E3-T1
- SI7370DP-T1-E3
- SI7380DP-T1-GE3
- SI7370DPT1E3
- SI7382DP
- SI7370DP-T1
- SI7382DPT1E3
- SI7370DP1-E3
- SI7382DP-T1-E3
- SI7370DP
- SI7370DO-T1-GE3
- SI7382DPT1GE3
- SI7370ADP-T1-GE3
- SI7382DP-T1-GE3
- SI7370ADPT1GE3
- SI7370ADP-T1-E3
- SI7370
- SI7384A
- SI7368DP-T1-GE3
- SI7384DP
- SI7368DPT1GE3
- SI7384DP1-E3
- SI7384DPT1E3
- SI7368DP-T1-E3
- SI7384DP-T1-E3
- SI7368DPT1E3
- SI7368DP-T1
- SI7384DPT1GE3
- SI7384DP-T1-GE3
- SI7366DP-T1-GE3
- SI7386
- SI7366DPT1GE3
- SI7386A
- SI7366DP-T1-E3
- SI7386ADP-T1-GE3
- SI7366DPT1E3
- SI7386DP
- SI7366DP
- SI7386DP1-E3
- SI7366A
- SI7386DP-T1
- SI7363DP-T1-E3
- SI7386DPT1E3



