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首页>SI7120ADN-T1-GE3>芯片详情
SI7120ADN-T1-GE3_NKKSWITCHES/恩楷楷_MOSFET N-CH 60V 1212-8 PPAK南科功率半导
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产品属性
- 类型
描述
- 型号:
SI7120ADN-T1-GE3
- 功能描述:
MOSFET N-CH 60V 1212-8 PPAK
- RoHS:
是
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
TrenchFET®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商
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