| 订购数量 | 价格 |
|---|---|
| 1+ |
首页>SI7107DN-T1-E3>芯片详情
SI7107DN-T1-E3_VISHAY/威世_MOSFET 20V 15.3A 3.8W 10.8mohm @ 4.5V诺美思科技
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SI7107DN-T1-E3
- 功能描述:
MOSFET 20V 15.3A 3.8W 10.8mohm @ 4.5V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
相近型号
- SI7106DN-T1-GE3
- SI7108DN1-GE3
- SI7106DNT1GE3
- SI7108DN-T1
- SI7106DN-T1-E3IC
- SI7108DN-T1-3
- SI7108DNT1E3
- SI7106DN-T1-E3CT
- SI7108DN-T1-E3
- SI7106DN-T1-E3
- SI7108DN-T1-E3CT
- SI7106DNT1E3
- SI7106DN1-GE3
- SI7108DN-T1-GE
- SI7106DN
- SI7108DNT1GE3
- SI7106
- SI7104DN-T1-GE3
- SI7108DN-T1-GE3
- SI7108DN-T1-GE3CT
- SI7104DNT1GE3
- SI7104DN-T1-E3
- SI7104DNT1E3
- SI7108DN-TI-E3
- SI7102DN-T1-GE3CT
- SI711
- SI7102DN-T1-GE3
- SI7110
- SI7110DN
- SI7102DNT1GE3
- SI7110DNT1E3
- SI7102DN-T1-E3
- SI7102DNT1E3
- SI7110DN-T1-E3
- SI7102DN
- SI7110DN-T1-E3CT
- SI7110DN-T1-E3MOS()
- SI7101DN-T1-GE3
- SI7110DNT1GE3
- SI7110DN-T1-GE3
- SI7101DNT1GE3
- SI7101DN-T1-E3
- SI7110DN-T1-GE3CT
- SI7101DN
- SI7110DN-T1-GE3IC
- SI-71011-F
- SI-71010-F
- SI7111EDNT1GE3
- SI7111EDN-T1-GE3
- SI7100EDN-T1-GE3



