订购数量 | 价格 |
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1+ |
SI7101DN-T1-GE3_VISHAY/威世科技_MOSFET -30V 7.2mOhm@10V -35A P-Ch G-III恒凯威科技
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产品属性
- 类型
描述
- 型号:
SI7101DN-T1-GE3
- 功能描述:
MOSFET -30V 7.2mOhm@10V -35A P-Ch G-III
- RoHS:
否
- 制造商:
Vishay Semiconductors
- 晶体管极性:
P-Channel
- 汲极/源极击穿电压:
- 30 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
- 35 A 电阻汲极/源极
- RDS(导通):
0.0072 Ohms
- 配置:
Dual Dual Drain
- 最大工作温度:
+ 150 C
- 安装风格:
SMD/SMT
- 封装/箱体:
PowerPak-1212-8
- 封装:
Reel
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