| 订购数量 | 价格 |
|---|---|
| 1+ |
首页>SI5515DC-T1-GE3>芯片详情
SI5515DC-T1-GE3_VISHAY/威世_MOSFET N/P-CH 20V CHIPFET 1206-8坤融电子
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SI5515DC-T1-GE3
- 功能描述:
MOSFET N/P-CH 20V CHIPFET 1206-8
- RoHS:
是
- 类别:
分离式半导体产品 >> FET - 阵列
- 系列:
TrenchFET®
- 产品目录绘图:
8-SOIC Mosfet Package
- 标准包装:
1
- 系列:
- FET
- 型:
2 个 N 沟道(双) FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
60V 电流 - 连续漏极(Id) @ 25°
- C:
3A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
75 毫欧 @ 4.6A,10V Id 时的
- Vgs(th)(最大):
3V @ 250µA 闸电荷(Qg) @
- Vgs:
20nC @ 10V 输入电容(Ciss) @
- Vds:
- 功率 -
- 最大:
1.4W
- 安装类型:
表面贴装
- 封装/外壳:
PowerPAK? SO-8
- 供应商设备封装:
PowerPAK? SO-8
- 包装:
Digi-Reel®
- 产品目录页面:
1664(CN2011-ZH PDF)
- 其它名称:
SI7948DP-T1-GE3DKR
供应商
相近型号
- SI5509DC-T1-GE3
- SI5855CDC-T1-GE3
- SI5504DC-T1-GE3
- SI5855DC-T1-E3
- SI5504DC-E3
- SI5856DC-T1-E3
- SI5504BDC-T1-GE3
- SI5858DU-T1-GE3
- SI5504BDC-T1-E3
- SI5902BDC-T1-E3
- SI5504BDC
- SI5902BDC-T1-GE3
- SI5499DC-T1-GE3
- SI5903DC-T1-E3
- SI5475DC-T1-GE3
- SI5904DC-T1-E3
- SI5473DC-T1-GE3
- SI5905BDC-T1-E3
- SI5471DC-T1-GE3
- SI5905DC-T1-E3
- SI5468DC-T1-GE3
- SI5908
- SI5465EDC-T1-GE3
- SI5908DC-T1-E3
- SI5463EDC-T1-GE3
- SI5908DC-T1-GE3
- SI5461EDC-T1-GE3
- SI5913DC-T1-GE3
- SI5457DC-T1-GE3
- SI5915BDC-T1-E3
- SI5449DC-T1-GE3
- SI5915DC-E3
- SI5447DC-T1-GE3
- SI5915DC-T1
- SI5447DC-T1-E3
- SI5915DC-T1-E3
- SI5445DC-T1-GE3
- SI5915DC-T1-GE3
- SI5445BDC-T1-GE3
- SI5920DC-T1-E3
- SI5442DU-T1-GE3
- SI5933CDC-T1-E3
- SI5441DC-T1-GE3
- SI5933CDC-T1-GE3
- SI5441DC-T1-E3
- SI5933DC-T1-E3
- SI5441DC-T1
- SI5935CDC
- SI5441BDC-T1-GE3
- SI5935CDC-T1-GE3



