| 订购数量 | 价格 |
|---|---|
| 1+ |
首页>SI5443DC-T1-E3>芯片详情
SI5443DC-T1-E3_VISHAY/威世_MOSFET 20V 4.9A 2.5W诺美思科技
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SI5443DC-T1-E3
- 功能描述:
MOSFET 20V 4.9A 2.5W
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
相近型号
- SI5445BDC-T1-E
- SI5442DUT1GE3
- SI5445BDCT1E3
- SI5441DE-T1
- SI5445BDC-T1-E3
- SI5445BDCT1GE3
- SI5441DC-TT1-E3
- SI5445BDC-T1-GE3
- SI5445DC
- SI5445DCT1
- SI5445DC-T1
- SI5445DC-T1-E3
- SI5441DC-T1-GE3
- SI5445DC-T1-GE3
- SI5441DCT1GE3
- SI5446DU-T1-GE3
- SI5441DC-T1FETIGBTIC
- SI54-470
- SI54-470K
- SI5447DC
- SI5447DC-T1
- SI5447DCT1E3
- SI5441DC-T1-E3IC
- SI5447DC-T1-E3
- SI5447DC-T1-E3IC
- SI5441DC-T1-E3
- SI5447DCT1GE3
- SI5441DCT1E3
- SI5447DC-T1-GE3
- SI5441DCT1(VISHAY)
- SI5447DC-TI
- SI5441DC-T1
- SI5447DC-TI-E3
- SI5441DCPB-FREE
- SI5448DUT1GE3
- SI5441DCOT10E3
- SI5448DU-T1-GE3
- SI5441DCFETIGBTIC
- SI5449DC
- SI5441DC1-E3
- SI5449DC-T1
- SI5449DCT1E3
- SI5441DC
- SI5449DC-T1-E3
- SI5449DCT1GE3
- SI5441BDC-T1-GE3
- SI5449DC-T1-GE3
- SI5441BDCT1GE3
- SI544B
- SI54-4R7



