订购数量 | 价格 |
---|---|
1+ |
Si4190ADY_VISHAY/威世科技_MOSFET 100V 8.8mOhm@10V 18.4A N-Ch MV T-FET汇莱威一部
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
Si4190ADY
- 功能描述:
MOSFET 100V 8.8mOhm@10V 18.4A N-Ch MV T-FET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
相近型号
- SI4178DY-T1-E3
- SI4200DB-BM
- SI4178DY
- SI4200DB-BMR
- SI4174DY-T1-GE3
- SI4200DB-GMR
- SI4174DY-T1-E3
- SI4201-BMR
- SI4174DY
- SI4201-GMR
- SI4172DY-T1-GE3
- SI4202DY
- SI4172DY-T1-G3
- SI4202DY-T1-E3
- SI4172DY-T1-E3
- SI4202DY-T1-GE3
- SI4172DY
- SI4204DY
- SI4168DY-T1-GE3
- SI4204DY-T1-E3
- SI4168DY
- SI4204DY-T1-GE3
- SI4166DY-T1-GE3
- SI4205-BM
- SI4166DY-T1-E3
- SI4205-BMR
- SI4166DY
- SI4206-BM
- SI4164DY-T1-GE3
- SI4206-BMR
- SI4164DY
- SI4208B-GM
- SI4162DY-T1-GE3
- SI4209-GM
- SI4162DY-T1-E3
- SI4210-C-GMR
- SI4162DY
- SI4210-D-GMR
- SI4160DY-T1-GE3
- SI4210DY-T1-GE3
- SI4160DY-T1-E3
- SI4210GM
- SI4160DY
- SI4210-GM
- SI4158DY-T1-GE3
- SI4214DDY
- SI4156DY-T1-GE3
- SI4214DDY-T1-E3
- SI4156DY-T1-E3
- SI4214DDY-T1-GE3