订购数量 | 价格 |
---|---|
1+ |
首页>SI3948DV-T1-E3>芯片详情
SI3948DV-T1-E3_VISHAY/威世科技_MOSFET 30V 2.5A DUAL N-CH TRENCH科达星科技
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SI3948DV-T1-E3
- 功能描述:
MOSFET 30V 2.5A DUAL N-CH TRENCH
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
相近型号
- SI3983DV-T1-GE3
- SI3911DV-T1-E3
- SI3993CDV
- SI3909DV-T1-GE3
- SI3993CDV-T1-GE3
- SI3905DV-T1-GE3
- SI3993DV-T1-E3
- SI3905DV-T1
- SI3993DV-T1-GE3
- SI3900DV-T1-GE3
- SI4004DY-T1-GE3
- SI4010
- SI3900DV-T1-E3
- SI4010-C2
- SI3900DV
- SI4010-C2003ATR
- SI4010-C2004ATR
- SI3879DV-T1-E3
- SI4010-C2-AT
- SI3867DV-T1-GE3
- SI4010-C2-ATR
- SI4010-C2-GS
- SI3865DV-T1-GE3
- SI4010-C2-GSR
- SI3865DV-T1
- SI4010-C2-GT
- SI3865DDV-T1-GE3
- SI4010-C2-GTR
- SI3865DDV
- SI4010-C2-ZT1R
- SI3865CDV-T1-GE3
- SI4010DY-T1-GE3
- SI3865BDV-T1-GE3
- SI4012
- SI3861DV-T1-E3
- SI4012-C1001GT
- SI3861DV
- SI4012-C1001GTR
- SI3861BDV-T1-GE3
- SI4013-C1001GSR
- SI3861BDV-T1-E3
- SI4020-I1-FT
- SI3853DV-T1-GE3
- SI4021-A1-FT
- SI3853DV-T1-E3
- SI4021-A1-FTR
- SI4022-A0-FT
- SI3851DV-T1-E3
- SI4022-A0-FTR
- SI3851DV-T1