SI3442DV中文资料N-Channel Logic Level Enhancement Mode Field Effect Transistor数据手册ONSEMI规格书

描述 Description

General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

特性 Features

■ 4.1 A, 20 V. 
   RDS(ON) = 0.06 W @ VGS = 4.5 V
   RDS(ON) = 0.075 W @ VGS =2.7 V.
■ Proprietary SuperSOTTM-6 package design using copper
   lead frame for superior thermal and electrical capabilities.
■ High density cell design for extremely low RDS(ON).
■ Exceptional on-resistance and maximum DC current capability.