SI3442DV数据手册ONSEMI中文资料规格书
SI3442DV规格书详情
描述 Description
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
特性 Features
■ 4.1 A, 20 V.
RDS(ON) = 0.06 W @ VGS = 4.5 V
RDS(ON) = 0.075 W @ VGS =2.7 V.
■ Proprietary SuperSOTTM-6 package design using copper
lead frame for superior thermal and electrical capabilities.
■ High density cell design for extremely low RDS(ON).
■ Exceptional on-resistance and maximum DC current capability.
技术参数
- 型号：
SI3442DV
- 功能描述：
MOSFET SSOT6 SINGLE NCH
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
19+ |
SOT23-6 |
20000 |
2770 |
询价 | ||
VISHAY |
23+ |
SOT |
2569 |
全新原装假一赔十 |
询价 | ||
FSC/ON |
23+ |
原包装原封 □□ |
37250 |
原装进口特价供应 特价，原装元器件供应，支持开发样品 更多详细咨询 库存 |
询价 | ||
VISHAY |
12+ |
SOT-163 |
2500 |
原装现货/特价 |
询价 | ||
VISHAY |
2022 |
SOT |
2300 |
原装现货,诚信经营! |
询价 | ||
VISHAY |
24+ |
SOT-23-6 |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
询价 | ||
VISHAY |
24+ |
SOT23-6 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
询价 | ||
VISHAY |
23+ |
SOT23-6 |
999999 |
原装正品现货量大可订货 |
询价 | ||
Fairchild/ON |
22+ |
SOT236 Thin TSOT236 |
9000 |
原厂渠道,现货配单 |
询价 | ||
VISHAY |
24+ |
SOT23-6 |
2568 |
原装优势!绝对公司现货 |
询价 |
