| 订购数量 | 价格 |
|---|---|
| 1+ |
首页>SI1401EDH-T1-GE>芯片详情
SI1401EDH-T1-GE_VISHAY/威世_MOSFET -12V 34mOhm@4.5V 4A P-Ch G-III坤融电子
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SI1401EDH-T1-GE
- 功能描述:
MOSFET -12V 34mOhm@4.5V 4A P-Ch G-III
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
相近型号
- SI-1340H
- SI1404DL-T1-GE3
- SI1405BDH-T1-GE3
- SI1330EDL-T1-GE3
- SI1406DH-T1
- SI1330EDL-T1-E3
- SI1406DH-T1-GE3
- SI1330EDL-T1-BE3
- SI1330EDL
- SI1407DL-T1-E3
- SI1317DL-T1-GE3
- SI1410EDH-T1-E3
- SI1317DL
- SI1410EDH-T1-GE3
- SI1315DL-T1-GE3
- SI1411DH
- SI1311-DSWVR
- SI1411DH-T1-BE3
- SI1411DH-T1-GE3
- SI1308EDL-T1-GE3
- SI1413EDH-T1
- SI1308EDL-T1-BE3
- SI1308EDL
- SI1414DH-T1-GE3
- SI1307EDL-T1-GE3
- SI1307EDL-T1-E3
- SI1416EDH
- SI1416EDH-T1-BE3
- SI1307DL-T1-GE3
- SI1416EDH-T1-GE3
- SI1307-DL-T1-E3
- SI1417DH-T1-E3
- SI1307DL-T1
- SI1417DH-T1-GE3
- SI1305EDL-T1-E3
- SI1417EDH-T1-E3
- SI1417EDH-T1-GE3
- SI1305DL-T1-E3
- SI1305DL-T
- SI1304DL-T1-GE3
- SI1422DH-T1-GE3
- SI1424EDH
- SI1304DL-T1-E3
- SI1424EDH-T1-BE3
- SI1304DL-T1
- SI1424EDH-T1-GE3
- SI1304BDL-T1-GE3
- SI1304BDL-T1-E3
- SI1426DH-T1-E2
- SI1303EDL-T1-E3



