丝印：SHF；Package：SC70(DCK)；TPS717-Q1 Low-Noise, High-Bandwidth PSRR, Low-Dropout, 150-mA Linear Regulator

1 Features 1• AEC-Q100 Qualified with the Following Results: – Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range – Device HBM ESD Classification Level 2 – Device HBM ESD Classification Level C4B • Input Voltage: 2.5 V to 6.5 V • Available in Multiple Output Vers

文件：1.87539 Mbytes 页数：39 Pages

TI

德州仪器

丝印：SHF；Package：SC70(DCK)；TPS717-Q1 Low-Noise, High-Bandwidth PSRR, Low-Dropout, 150-mA Linear Regulator

1 Features 1• AEC-Q100 Qualified with the Following Results: – Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range – Device HBM ESD Classification Level 2 – Device HBM ESD Classification Level C4B • Input Voltage: 2.5 V to 6.5 V • Available in Multiple Output Vers

文件：1.87539 Mbytes 页数：39 Pages

TI

德州仪器

丝印：SHF；Package：SC70(DCK)；TPS717-Q1 Low-Noise, High-Bandwidth PSRR, Low-Dropout, 150-mA Linear Regulator

1 Features 1• AEC-Q100 Qualified with the Following Results: – Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range – Device HBM ESD Classification Level 2 – Device HBM ESD Classification Level C4B • Input Voltage: 2.5 V to 6.5 V • Available in Multiple Output Vers

文件：1.87539 Mbytes 页数：39 Pages

TI

德州仪器

丝印：SHF；Package：SC70(DCK)；TPS717-Q1 Low-Noise, High-Bandwidth PSRR, Low-Dropout, 150-mA Linear Regulator

1 Features 1• AEC-Q100 Qualified with the Following Results: – Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range – Device HBM ESD Classification Level 2 – Device HBM ESD Classification Level C4B • Input Voltage: 2.5 V to 6.5 V • Available in Multiple Output Vers

文件：1.87539 Mbytes 页数：39 Pages

TI

德州仪器

0.05-12 GHz, 0.5 Watt GaAs HFET

Product Description Sirenza Microdevices’ SHF-0186 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved lineari

文件：730.72 Kbytes 页数：4 Pages

SIRENZA

DC-12 GHz, 0.5 Watt AlGaAs/GaAs HFET

Product Description Stanford Microdevices’ SHF-0186 is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Pr

文件：159.39 Kbytes 页数：4 Pages

STANFORD

0.05-6 GHz, 0.5 Watt GaAs HFET

Product Description Sirenza Microdevices’ SHF-0186K is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linear

文件：731.62 Kbytes 页数：4 Pages

SIRENZA

0.05 - 6 GHz, 0.5 Watt GaAs HFET

Product Description Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved lineari

文件：99.82 Kbytes 页数：4 Pages

SIRENZA

0.05 - 6 GHz, 0.5 Watt GaAs HFET

[Sirenza] Product Description Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and impro

文件：99.82 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

0.05 - 6 GHz, 0.5 Watt GaAs HFET

[Sirenza] Product Description Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and impro

文件：99.82 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商