SH Series

文件：352.78 Kbytes 页数：2 Pages

SHARMA

TANTALUM DIPPED

文件：243.72 Kbytes 页数：3 Pages

DUBILIER

丝印：SH；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

文件：692.73 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：SH；Package：SOT23；50 V, 500 mA NPN general-purpose transistors

Features * General-purpose transistors * Three current gain selections * AEC-Q101 qualified * Small SMD plastic package

文件：614.84 Kbytes 页数：9 Pages

NEXPERIA

安世

丝印：SH；Package：SOD323F；Single Zener diodes

1.1 General description General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits 1.3 Applications  General regulation functions  Non-repetitive peak reverse power dissipation:  40 W  Wide working

文件：988.38 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：SH；Package：SOD323F；Zener voltage regulator diodes

1. General description General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Non-repetitive peak reverse power dissipation: ≤ 100 W for types ≤ 6.8 V • Non-repetitive peak reverse power dissipation

文件：310.63 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：SH；Package：SOD-323；SMD Schottky Barrier Diodes

Features - Low forward voltage drop. - Very small SMD package.

文件：474.28 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：SH；Package：SOD-323；SMD Schottky Barrier Diodes

Features - Low forward voltage drop. - For power supply.

文件：475.02 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：SH；Package：SMA；400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Glass Passivated Die Construction 400W Peak Pulse Power Dissipation 5.0V – 440V Standoff Voltage Uni- and Bi-Directional Versions Available Excellent Clamping Voltage Typical Response Time

文件：111.34 Kbytes 页数：6 Pages

WTE

Won-Top Electronics

丝印：SH；Package：SOT457；30 V, 5.1 A N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology 1.3 App

文件：1.09791 Mbytes 页数：16 Pages

NEXPERIA

安世