Silicon RF Pulse Power Transistor(Continued)

RISIN

瑞函

100V N-Channel MOSFET

The SG-MOSFET uses trench MOSFET technology that is uniquely optimized to provide the most efficient highfrequency switching performance.\nBoth conduction and switching power losses are minimized due to anextremely low combination of RDS(ON), Ciss and Coss.\nThis device is ideal for boost converters • VDS : 100V\n• RDS(on)\n• 100% avalanche tested;

Super

超致半导体

Silicon RF Pulse Power Transistor(Continued)

RISIN

瑞函

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 20A 92W TO220-3

Infineon

英飞凌

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 16A TO220-3

ONSEMI

安森美半导体