零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
Component16X1PAIR | ALPHAWIREAlpha Wire 阿尔法电线 | ALPHAWIRE | ||
CrystalFilter | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
6SP22SOLIDTCPVC/PVCComputerCable | GENERALGeneral Electric 通用电气公司美国通用电气公司 | GENERAL | ||
DIPLEXERSFORCABLEMODEMS,SETTOPBOXESANDGATEWAYS RF,HFC&CATVAPPLICATIONS PluseoffersacomprehensivelineofRFmagneticcomponentsforuseinwirelessandRFapplications, includingmobilecommunications,cabletelevision,hybridfiber/coax(HFC)equipment,cablemodems,set-topboxes,andhomenetworking.Thecomponentsareal | pulse Pulse Electronics | pulse | ||
BROADBAND:RF&WIRELESS RF,HFC&CATVAPPLICATIONS PluseoffersacomprehensivelineofRFmagneticcomponentsforuseinwirelessandRFapplications, includingmobilecommunications,cabletelevision,hybridfiber/coax(HFC)equipment,cablemodems,set-topboxes,andhomenetworking.Thecomponentsareal | pulse Pulse Electronics | pulse | ||
Automatedprobemanufacturingenableslowcostandshortleadtime | IRONWOODIronwood Electronics. Lronwood电子公司 | IRONWOOD | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,135A,RDS(ON)=4.6mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,144A,RDS(ON)=4.0mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=5.5mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,118A,RDS(ON)=4.0mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=5.5mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,135A,RDS(ON)=4.6mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,144A,RDS(ON)=4.0mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=5.5mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,118A,RDS(ON)=4.0mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=5.5mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
SIL2Switch/ProximityRelay-OutRepeater FEATURES SIL2/SC3 Highvoltage/currentratingrelayoutput Fieldopenandshortcircuitdetection In-fieldprogrammabilitybyDIPSwitch Threeportisolation,Input/Output/Supply HighDensity,twochannelsperunit | GMIG.M. International Gm 国际公司 | GMI | ||
SIL2Switch/ProximityRelay-OutRepeater FEATURES SIL2/SC3 Highvoltage/currentratingrelayoutput Fieldopenandshortcircuitdetection In-fieldprogrammabilitybyDIPSwitch Threeportisolation,Input/Output/Supply HighDensity,twochannelsperunit | GMIG.M. International Gm 国际公司 | GMI | ||
SIL2Switch/ProximityRelay-OutRepeater FEATURES SIL2/SC3 Highvoltage/currentratingrelayoutput Fieldopenandshortcircuitdetection In-fieldprogrammabilitybyDIPSwitch Threeportisolation,Input/Output/Supply HighDensity,twochannelsperunit | GMIG.M. International Gm 国际公司 | GMI | ||
HingeDoorwithQuarterTurn/Handle Application -Designedtoencloseelectricaland/orelectronicequipmentandprotectagainstharsh,industrialenvironmentsforwallmountapplications. -ImpressivestylingfeatureslikehiddenhingesandattractivelatchingsystemsmaketheEclipseasuitableadditiontoanyhigh-techequipmentins | HAMMOND Hammond Manufacturing Ltd. | HAMMOND | ||
HingeDoorwithQuarterTurn/Handle Application -Designedtoencloseelectricaland/orelectronicequipmentandprotectagainstharsh,industrialenvironmentsforwallmountapplications. -Impressivestylingfeatureslikehiddenhinges,attractivelatchingsystemsmaketheEclipseasuitableadditiontoanyhigh-techequipmentinstal | HAMMOND Hammond Manufacturing Ltd. | HAMMOND | ||
Armoiremuralepourcoupe-circuitenacierdouxdetype4 | HAMMOND Hammond Manufacturing Ltd. | HAMMOND | ||
Armoiremuralepourcoupe-circuitenacierinoxydabledetype4X | HAMMOND Hammond Manufacturing Ltd. | HAMMOND |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SGMICRO/圣邦微 |
23+ |
UTDFN-1.5×2-6L |
52000 |
圣邦微电子全线供应,可提供样品 |
询价 | ||
SGM |
21+ |
DFN |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SGM |
20+ |
DFN |
1800 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
SGMICRO |
22+ |
SMD |
24000 |
询价 | |||
SGMICRO |
22+ |
UTDFN-1.52 |
10000 |
原装正品,渠道现货 |
询价 | ||
SGMICRO/圣邦微 |
22+ |
UTDFN-1.52 |
15000 |
原装正品 |
询价 | ||
SGMICRO |
24+ |
UTDFN-1.52 |
5000 |
原装正品 |
询价 | ||
SGMICRO(圣邦微) |
22+ |
N/A |
2291 |
全新原装 |
询价 | ||
SGMICRO |
UTDFN-1.52 |
893993 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
SGMICRO |
21+ |
UTDFN-1.52 |
15000 |
原包装原标现货,假一罚十, |
询价 |
相关规格书
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