SGM48536BQ数据手册SGMICRO中文资料规格书

描述 Description

The SGM48536BQ is a single high-speed low-side gate driver for MOSFET and IGBT power switches. The device can provide rail-to-rail driving capability and very small propagation delays (18.5ns, TYP). It also provides 4A peak source current and 8A peak sink current (asymmetrical drive) when VDD = 12V. The input can withstand a maximum negative voltage of -10V. 
The operating voltage range is 9V to 25V. The device features under-voltage lockout (UVLO) function. After UVLO is triggered, the output remains low. 
The SGM48536BQ adopts separate output architecture. The separate output structure with asymmetric drive improves the immunity of the device to the parasitic Miller conduction effect and reduces ground bounce. 
The input threshold of the device is compatible with low voltage TTL and CMOS logic, which will not be affected by VDD changes. A Schmitt trigger is used at the input, and a wide range of hysteresis voltage is designed to enhance the immunity. 
The SGM48536BQ is available in a Green SOT-23-6 package. 
This device is AEC-Q100 qualified (Automotive Electronics Council Standard Q100 Grade 1) and the use of this device is suitable for automotive applications.