SGM48524Q数据手册SGMICRO中文资料规格书

描述 Description

The SGM48524Q is a dual high-speed low-side gate driver for MOSFET and IGBT power switches. It has rail-to-rail driving capability and can sink and source up to 5A peak current with capacitive loads. The propagation delays are very short and well matched between the two channels that make the device very fit for applications that need accurate dual gate driving such as synchronous rectifiers. The matched propagation delays also allow for paralleling the two channels when higher driving current is required, such as for paralleled switches. The input voltage thresholds are fixed, independent of supply voltage (VDD) and are compatible with low voltage TTL and CMOS logic. Noise immunity is excellent due to the wide hysteresis window between the input low and high thresholds. The device has internal pull-up/pull-down resistors on the input pins to ensure low state on the driver output when the inputs are floating.
The SGM48524Q is a dual non-inverting driver. It has independent enable pins (ENA and ENB) for each channel with active-high logic that can be left open for normal operation because of internal pull-up to VDD.
The SGM48524Q is available in a Green SOIC-8 package. It operates over a temperature range of -40℃ to +125℃.
This device is AEC-Q100 qualified (Automotive Electronics Council (AEC) standard Q100 Grade 1) and it is suitable for automotive applications.

特性 Features

• AEC-Q100 Qualified for Automotive Applications
Device Temperature Grade 1
TA = -40℃ to +125℃

• Two Independent Gate Drive Channels

• 4.5V to 18V Single Supply Range (VDD)

• 5A Peak Source/Sink Pulse Current Drive

• Independent Enable Pin for Each Channel

• TTL and CMOS Compatible Logic Threshold

• Logic Levels Independent of Supply Voltage

• Hysteretic Input Logic for High Noise Immunity

• Outputs are Logic Low when Inputs are Floating

• Negative Voltage Handling Capability:
-8V DC at Inputs
-2V, 200ns Pulse for Outputs (OUTx)

• Glitch-Free Operation at Power-Up and Power- Down: Outputs Pulled Low during Supply UVLO

• Fast Propagation Delays: 18ns (TYP)

• Fast Rise Time: 7ns (TYP)

• Fast Fall Time: 8ns (TYP)

• Delay Matching between Two Channels: 1ns (TYP)

• Channels can be Paralleled for Higher Drive Current

• Available in a Green SOIC-8 Package

应用 Application

Power MOSFETs
IGBT Driving for Power Supplies
DC/DC Converters
Solar Power, Motor Drivers
Gate Drive for Emerging Wide Bandgap Devices