Ultra-Fast IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low S

文件：543.34 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Ultra-Fast IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low

文件：607.18 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

TO-3PF Tube Packing Data

文件：363.83 Kbytes 页数：1 Pages

FAIRCHILD

仙童半导体

600 V PT IGBT

文件：277.97 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

IGBT，600V，PT

飞兆半导体的 UF 系列 IGBT 提供低导通和开关损耗。UF系列设计用于需要高速开关特性的一般逆变器和PFC等应用。 •高速开关\n•低饱和电压：VCE(sat) = 2.1V @ IC = 12A\n•高输入阻抗;

ONSEMI

安森美半导体

Package：TO-3P-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 23A 75W TO3PF

ONSEMI

安森美半导体

Package：TO-3P-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 23A 75W TO3PF

ONSEMI

安森美半导体

Package：TO-3P-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 23A TO3PF

ONSEMI

安森美半导体