| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SGB30N60 | Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
SGB30N60 | Fast IGBT in NPT-technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
ACTIVE/SYNCHRONOUSRECTIFIER | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
BIDW30N60TInsulatedGateBipolarTransistor(IGBT) GeneralInformation TheBourns®ModelBIDW30N60TIGBTdevicecombinestechnologyfromaMOSgate andabipolartransistorforanoptimumcomponentforhighvoltageandhighcurrent applications.ThisdeviceusesTrench-GateField-Stoptechnologyprovidinggreater controlofdynamiccharacteris | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
N-ChannelEnhancementModeMOSFET | DACO DACO | DACO | ||
N-ChannelEnhancementModeMOSFET | DACO DACO | DACO | ||
N-ChannelEnhancementModeMOSFET | DACO DACO | DACO | ||
MOSFETsandbipolartransistors | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
MOSFETsandbipolartransistors | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Lowsaturationvoltage:VCE(sat)=1.1V@IC=30A | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Lowsaturationvoltage:VCE(sat)=1.1V@IC=30A | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DiscreteIGBT(High-SpeedVseries)600V/30A | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
600V,SMPSSeriesN-ChannelIGBT TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
60A,600V,UFSSeriesN-ChannelIGBT TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
60A,600V,UFSSeriesN-ChannelIGBT TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
600V,SMPSSeriesN-ChannelIGBTwith TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderat | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
详细参数
- 型号：
SGB30N60
- 功能描述：
IGBT 晶体管 FAST IGBT NPT TECH 600V 30A
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集电极—发射极最大电压
- VCEO：
650 V
- 集电极—射极饱和电压：
2.3 V
- 栅极/发射极最大电压：
20 V 在25
- C的连续集电极电流：
150 A
- 栅极—射极漏泄电流：
400 nA
- 功率耗散：
187 W
- 封装/箱体：
TO-247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
19+ |
SOT263 |
12000 |
询价 | |||
INFINEON |
SOT-263 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
INENOI |
20+ |
SOT263 |
100 |
全新原装,价格优势 |
询价 | ||
英飞翎 |
17+ |
D2PAK(TO-263) |
31518 |
原装正品 可含税交易 |
询价 | ||
INFINEON |
23+ |
TO-247 |
10000 |
专业模块销售,欢迎咨询 |
询价 | ||
INF |
1000 |
询价 | |||||
INFINEON原 |
2017+ |
TO-263 |
44558 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
INF |
2022+ |
SOT263 |
5000 |
只做原装公司现货 |
询价 | ||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
TOS |
23+ |
SOP |
50000 |
全新原装假一赔十 |
询价 |
相关规格书
更多- SGB30N60_09
- SGB30N60-E3045A
- SGB30UFSMS
- SGB30UFSMSTX
- SGB35SL
- SGB35UFSMS
- SGB35UFSMSTX
- SGB-4333
- SGB-4533
- SGB-6433
- SGB-6533
- SGB8175
- SGB8206ANT4G
- SGB-ACT
- SGBJ15G
- SGBJ15K
- SGB-MAAP
- SGBPC3501
- SGBPC3504
- SGBPC3508
- SGBPC3512
- SGBPC3516
- SG-BWS-T4-MT
- SGC10DH
- SGC10DLH
- SGC10GLH
- SGC10JLH
- SGC10KLH
- SGC10MLH
- SGC136
- SGC140
- SGC221B-10G15Y-3DZ
- SGC-2386
- SGC-2386Z
- SGC243
- SGC-2463Z
- SGC-2486Z
- SGC256
- SGC3S030
- SGC3S100
- SGC3S300
- SGC-42SP-04V
- SGC-4363Z
- SGC-4386Z_1
- SGC-4463Z_1
相关库存
更多- SGB30N60ATMA1
- SGB30UF
- SGB30UFSMSS
- SGB30UFSMSTXV
- SGB35UF
- SGB35UFSMSS
- SGB35UFSMSTXV
- SGB-4333Z
- SGB-4533Z
- SGB-6433Z
- SGB-6533Z
- SGB8206ANSL3G
- SGB8206ANTF4G
- SGBJ15D
- SGBJ15J
- SGBJ15M
- SGBPC35005
- SGBPC3502
- SGBPC3506
- SGBPC3510
- SGBPC3514
- SG-BWS-T4
- SGC
- SGC10DH_09
- SGC10GH
- SGC10JH
- SGC10KH
- SGC10MH
- SGC135-3R6
- SGC-13P-04V-7375 GLISSIE
- SGC2
- SGC-2363Z
- SGC-2386_1
- SGC240
- SGC2463Z
- SGC-2486_1
- SGC250
- SGC2-MAAP
- SGC3S060
- SGC3S200
- SGC421B-10G25Y-3DZ
- SGC-4363_1
- SGC-4386Z
- SGC-4463Z
- SGC-4486Z
