LOW NOISE, HIGH GAIN SiGe HBT

文件：1.09463 Mbytes 页数：13 Pages

RFMD

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Heterostructure Bipolar Transistor

文件：790.7 Kbytes 页数：12 Pages

QORVO

威讯联合

Heterostructure Bipolar Transistor

文件：790.7 Kbytes 页数：12 Pages

QORVO

威讯联合

LOW NOISE, HIGH GAIN SiGe HBT

文件：1.09463 Mbytes 页数：13 Pages

RFMD

威讯联合

DC - 6000 MHz Low Noise, High Gain Discrete SiGe HBT

Qorvo's SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6GHz. The SGA8343Z is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device provides high gain, low NF, and excel • DC to 6GHz Operation\n• 0.9dB NFMIN at 0.9GHz\n• 24dB GMAX at 0.9GHz\n• |GOPT|=0.10 at 0.9GHz\n• OIP3=+28dBm P1dB=+9dBm\n• Low Cost High Performance Versatility;

Qorvo

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