SG2823L-DESC数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-阵列规格书PDF

描述 Description

Cross reference to 5962-89685012A, 5962-89685012, 89685012Key Features:
• Eight NPN Darlington pairs
• Collector currents to 600mA
• Output voltages from 50V to 95V
• Internal clamping diodes for inductive loads
• DTL, TTL, PMOS, or CMOS compatible inputs
• Hermetic ceramic package The SG2800 series integrates eight NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in many military, aerospace, and industrial applications that require severe environments. All units feature open collector outputs with greater than 50V breakdown voltages combined with 500mA current carrying capabilities. Five different input configurations provide optimized designs for interfacing with DTL, TTL, PMOS, or CMOS drive signals. These devices are designed to operate from -55°C to 125°C ambient temperature in a 18-pin dual in-line ceramic (J) package and 20-pin leadless chip carrier (LCC).

简介

SG2823L-DESC属于分立半导体产品的晶体管-双极性晶体管（BJT）-阵列。由制造生产的SG2823L-DESC晶体管 - 双极性晶体管（BJT）- 阵列双极晶体管阵列在同一封装中包含两个或更多的分立晶体管，这些晶体管可在电气上完全隔离，也可在器件封装内部以某种形式互连。阵列中包含的器件具有相近或互补的特性，采用共同封装可最大程度减小器件在工作过程中的温差。