SG112

PHOTOINTERRUPTERS

SIJH112E

N-Channel100V(D-S)175째CMOSFET

FEATURES •TrenchFET®GenIVpowerMOSFET •Fullylead(Pb)-freedevice •OptimizedQg,Qgd,andQgd/Qgsratioreduces switchingrelatedpowerloss •Upto200Amaximumcontinuousdraincurrent •50smallerfootprintthanD2PAK(TO-263) •100RgandUIStested •Materialcategorization:

SIR112DP

N-Channel40V(D-S)MOSFET

FEATURES •TrenchFET®GenIVpowerMOSFET •100RgandUIStested •Qgd/Qgsratio

SIS112LDN

N-Channel100V(D-S)MOSFET

FEATURES •TrenchFET®GenIVpowerMOSFET •TunedforthelowestRDS-QossFOM •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Primarysideswitch •DC/DCconverter •Motordriveswitch •Boostconv

SISH112DN

N-Channel30V(D-S)FastSwitchingMOSFET

SK112WA

SurfaceMountSchottkyBarrierRectifier

SKB112

MiniatureBridgeRectifiers

SL112

Onepiececastaluminumcage

SM112.SA

GeneralPurposeTweezers

SMB112

Five-ChannelDigitallyProgrammableWhite-LEDandTFT/LCDPowerManager

INTRODUCTION TheSMB112isahighlyintegratedandflexiblefive-channelpowermanagerdesignedforpoweringTFT/LCDdisplaypanelsandfordrivinglow-andhigh-powerwhite-LEDs.Thebuilt-indigitalprogrammabilityallowssystemdesignerstocustomtailorthedevicetosuitalmostanymulti-c