SFT2014

HIGH ENERCY NPN TRANSISTOR

[SSDI] 2N5094AND2N5096 HIGHVOLTAGEPNPTRANSISTOR450-500VOLTS SFT2010,SFT2012,SFT2014 200AMPHIGHENERGYNPNTRANSISTORVCEO100,120,140VOLTS

SFT2014

200 AMP 100-140 VOLTS NPN TRANSISTOR

200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage

SFT2014

High Energy NPN Transistor

200AMP100–140VoltHighEnergyNPNTransistor Features: •BVCBO=250VMIN •600WattsPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighReliabilityConstruction •PlanarChipConstructionwithLowLeakageandVeryFastSwitching •TX,TXV,S-Leve

SFT2014/3

200 AMP 100-140 VOLTS NPN TRANSISTOR

200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage

SFT2014SLASH3

200 AMP 100-140 VOLTS NPN TRANSISTOR

200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage

SFT2014/3

200 A,140 V High Energy NPN Transistor; • BVCBO = 250 V MIN\n• 600 Watts Power Dissipation\n• Excellent SOA Curve\n• Es/b of 800 mJ\n• Gain of over 5 at 200 A\n• High Reliability Construction\n• Planar Chip Construction with Low Leakage and Very Fast Switching\n• TX, TXV, S-Level Screening Available;