25 A, 200 V Fast Switching Silicon Controlled Rectifier

• Low-Level Gate Characteristics\n• IGT = 200 µA (Max) @ 25°C\n• Low Holding Current IH = 1 mA (Max) @ 25°C\n• Anode Common to Case\n• Hermetically Sealed\n• TX, TXV, S-Level Screening Available;

SSDI

25 AMPS 100 ??400 VOLTS FAST SWITCHING SILICON CONTROLLED RECTIFIER

文件：142.83 Kbytes 页数：2 Pages

SSDI

25 A, 200 V Fast Switching Silicon Controlled Rectifier

• Low-Level Gate Characteristics\n• IGT = 200 µA (Max) @ 25°C\n• Low Holding Current IH = 1 mA (Max) @ 25°C\n• Anode Common to Case\n• Hermetically Sealed\n• TX, TXV, S-Level Screening Available;

SSDI

COLOUR DEMODULATOR COMBINATION

COLOUR DEMODULATOR COMBINATION

文件：143.93 Kbytes 页数：4 Pages

PHI

PHI

P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：456.52 Kbytes 页数：4 Pages

SUTEX

MINIBRIDGE 25,40,50 and 60 AMPERE BRIDGE RECTIFIERS

MINIBRIDGE 25,40,50 and 60 AMPERE BRIDGE RECTIFIERS INTEGRALLY MOLDED HEAT SINKS PROVIDE VERY LOW THERMAL RESISTANCE

文件：68.83 Kbytes 页数：2 Pages

EDI