25 A, 200 V Fast Switching Silicon Controlled Rectifier

• Low-Level Gate Characteristics\n• IGT = 200 µA (Max) @ 25°C\n• Low Holding Current IH = 1 mA (Max) @ 25°C\n• Anode Common to Case\n• Hermetically Sealed\n• TX, TXV, S-Level Screening Available;

SSDI

25 AMPS 100 ??400 VOLTS FAST SWITCHING SILICON CONTROLLED RECTIFIER

文件：142.83 Kbytes 页数：2 Pages

SSDI

25 A, 200 V Fast Switching Silicon Controlled Rectifier

• Low-Level Gate Characteristics\n• IGT = 200 µA (Max) @ 25°C\n• Low Holding Current IH = 1 mA (Max) @ 25°C\n• Anode Common to Case\n• Hermetically Sealed\n• TX, TXV, S-Level Screening Available;

SSDI

4 Pad Version 2.5x2.0 mm

文件：175.76 Kbytes 页数：2 Pages

FRONTER

福浪电子

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文件：318.44 Kbytes 页数：8 Pages

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SURFACE MOUNT SILICON ZENER DIODES

文件：131.74 Kbytes 页数：2 Pages

EIC