1.6 AMPS 200 ??400 VOLTS SILICON CONTROLLED RECTIFIER

文件：108.46 Kbytes 页数：2 Pages

SSDI

1.6 A, 300 V Silicon Controlled Rectifier

• Low-Level Gate Characteristics\n• Low Holding Current IH = 5 mA (Max) @ 25°C\n• Anode Common to Case\n• Hermetically Sealed\n• TX, TXV, S-Level Screening Available;

SSDI

N-Channel Enhancement-Mode MOSFET

Description •High speed switching application. •Analog switch application. Features •2.5V Gate drive. •Low threshold voltage : Vth = 0.5~1.5V. •High speed.

文件：284.87 Kbytes 页数：4 Pages

AUK

N-Channel Enhancement-Mode MOSFET

Description • High speed switching application. • Analog switch application. Features • 2.5V Gate drive. • Low threshold voltage : Vth = 0.5~1.5V. • High speed.

文件：282.65 Kbytes 页数：4 Pages

AUK

N-Channel Enhancement-Mode MOSFET

Description •High speed switching application. •Analog switch application. Features •2.5V Gate drive. •Low threshold voltage : Vth = 0.5~1.5V. •High speed.

文件：293.43 Kbytes 页数：4 Pages

AUK