Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ● Lower RDS(ON) : 0.206 Ω (Typ.)

文件：230.52 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● 175oC Operating Temperature ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.225 Ω (Typ.)

文件：233.63 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● 175oC Operating Temperature ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.161 Ω (Typ.)

文件：286.93 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -200V ■ Low RDS(ON) : 2.25 Ω (Typ.)

文件：247 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V ν Low RDS(ON) : 3.5 Ω (Typ.)

文件：268.51 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -200V ■ Low RDS(ON) : 1.111 Ω (Typ.)

文件：257.49 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -250V ■ Low RDS(ON) : 1.65 Ω (Typ.)

文件：260.079 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 mA (Max.) @ VDS = -200V ■ Low RDS(ON) : 0.581 Ω (Typ.)

文件：260.399 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 mA (Max.) @ VDS= -250V ■ Low RDS(ON) : 0.876 Ω(Typ.)

文件：256.68 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 mA (Max.) @ VDS = -200V ■ Low RDS(ON) : 0.344 Ω (Typ.)

文件：263.21 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司