Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -200V ■ Lower RDS(ON) : 1.111 Ω (Typ.)

文件：259.14 Kbytes 页数：7 Pages

FAIRCHILD

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Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -200V ■ Lower RDS(ON) : 1.111 Ω (Typ.)

文件：259.14 Kbytes 页数：7 Pages

FAIRCHILD

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Avalanche Rugged Technology

文件：259.88 Kbytes 页数：7 Pages

FAIRCHILD

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P-channel Enhancement Mode Power MOSFET

Features  VDS= -200V, ID= -3.6A RDS(ON)

文件：853.43 Kbytes 页数：6 Pages

BYCHIP

百域芯