丝印：10S40A；Package：TO-263-2L；10A, 400V ULTRA-FAST RECOVERY RECTIFIER

DESCRIPTION SFR10S40AD/S is an Ultra-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial process. The process parameter and the device structure are fine tuned with optimized performance of forward voltage drop and reverse recovery time. Precise epitaxial doping control, advance

文件：420.83 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

10A, 400V ULTRA-FAST RECOVERY RECTIFIER

DESCRIPTION SFR10S40AD/S is an Ultra-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial process. The process parameter and the device structure are fine tuned with optimized performance of forward voltage drop and reverse recovery time. Precise epitaxial doping control, advance

文件：420.83 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

10A, 400V ULTRA-FAST RECOVERY RECTIFIER

DESCRIPTION SFR10S40AD/S is an Ultra-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial process. The process parameter and the device structure are fine tuned with optimized performance of forward voltage drop and reverse recovery time. Precise epitaxial doping control, advance

文件：420.83 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Junction passivation optimized design passivated anisotropic rectifier technology

文件：2.51046 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子