Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● 175°C Opereting Temperature ● Extended Safe Operating Area ● Lower Leakage Current : -10 µA (Max.) @ VDS = -60V ● Low RDS(ON) : 0.362 Ω (Typ.)

文件：252.14 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc P-Channel MOSFET Transistor

文件：281.33 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

ONSEMI

安森美半导体

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● 175°C Operating Temperature ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ● Low RDS(ON) : 0.362 Ω (Typ.)

文件：230.85 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

P-Channel 60-V (D-S) MOSFET

文件：928.45 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

isc P-Channel MOSFET Transistor

文件：271.65 Kbytes 页数：2 Pages

ISC

无锡固电