Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : -10 mA (Max.) @ VDS = -200V ■ Low RDS(ON) : 1.111 Ω (Typ.)

文件：249.86 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

ONSEMI

安森美半导体

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -200V ■ Low RDS(ON) : 1.111 Ω (Typ.)

文件：257.49 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

文件：253.8 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：1.92643 Mbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司