Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -200V ■ Low RDS(ON) : 1.111 Ω (Typ.)

文件：257.49 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

ONSEMI

安森美半导体

Advanced Power MOSFET

文件：253.8 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：1.92643 Mbytes 页数：7 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件：281.92 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技